EC25C01 Electron Devices – Semester II – ECE / VLSI / ElecComp – R-2025

Subject Code & Name: EC25C01 – Electron Devices

Regulation: R-2025

Semester: II (Second Semester)

Branch: ECE / VLSI / ElecComp

Credits / L-T-P: 3 Credits | L-T-P: 3-0-0

Course Objectives

• To acquaint with the construction, theory and operation of the basic electronic devices such as PN junction diode, Bipolar and Field Effect Transistors, Power control devices, LED, LCD and other Optoelectronic devices.

Full Unit-wise Syllabus

Unit I – Semiconductor

Types, Conductivity, Electron energy levels and energy band diagram, Carrier concentration, Mass action law, Characteristics and behavior of intrinsic semiconductors, Variation in properties with temperature, Carrier drift and diffusion, Current density equation, Excess carrier generation and recombination rates, Carrier life time. Continuity equation.

Activity: Virtual demonstration of energy levels, Drift and diffusion current.

Unit II – PN Junction Diodes

Energy band diagram of open-circuited PN junction, Forward and reverse bias characteristics, Diode resistance, Transition and diffusion capacitance, Effect of temperature on diode behavior, clipper, clamper-Applications of PN junction diodes.

Unit III – Special Diodes

Zener diode – breakdown mechanisms and voltage regulation, Varactor diode, Tunnel diode, Photo diode – construction, operation, and applications.

Activities: Virtual demonstration of characteristics of junction diodes, Design of a constant voltage regulator using Zener Diode.

Unit IV – Bipolar Junction Transistors

Construction, working, characteristics in CB, CE, and CC configurations, regions of operation, current gain, input/output characteristics, Early effect. Other Devices: Multi-emitter transistor – construction and applications.

Unit V – Field Effect Transistors

JFET – construction, working, characteristics, parameters. MOSFET, MOS capacitor, depletion and enhancement modes, nMOS and pMOS, threshold voltage, transfer and output characteristics. CMOS – introduction and basic operation.

Unit VI – Thyristors, UJT, Optoelectronic Devices and Power MOSFETs

Thyristors: Shockley diode, Silicon Controlled Rectifier (SCR), TRIAC and DIAC – operation and applications, Thyristor protection techniques. Unijunction Transistor (UJT): Construction, characteristics and application as relaxation oscillator. Optoelectronic Devices: LED, LCD, Photo transistor, Opto-coupler – principle, characteristics and applications. Power MOSFETs: Construction, switching characteristics and applications in power circuits.

Course Outcomes (COs)

• CO1: Explain the behavior of Semiconductor physics and its applications in electron devices.
• CO2: Apply the concepts and compare the different configuration of various electron devices.
• CO3: Analyze and interpret the characteristics of various electron devices.
• CO4: Perform experiments to evaluate and compare the characteristics of electronic components.

Assessment Pattern (Quick Note)

• Weightage: Continuous Assessment 50% | End Semester Examinations 50%
• Internal methodology: Quiz (15%), Assignments (30%), Flipped Class (5%), GATE Questions (10%), Internal Examinations (40%)

Source: Official Anna University B.E. Electronics and Communication Engineering R-2025 Syllabus
Last Updated: September 2026